UV-assisted oxidation of SiGe strained layers

Low-temperature dry oxidation of Si-capped and uncapped MBE-grown Si 0.8Ge 0.2, assisted by the UV radiation from a low-pressure Hg grid lamp, has been studied. For short processing times, the oxidation rate of Si 0.8Ge 0.2 was found to be a factor of 2–3 higher than that induced by the same method...

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Bibliographic Details
Published in:Thin solid films 1992-12, Vol.222 (1), p.145-149
Main Authors: Cracium, V., Reader, A.H., Kersten, W., Timmers, J., Gravesteijn, D.J., Boyd, I.W.
Format: Article
Language:English
Subjects:
Chemistry
Exact sciences and technology
General and physical chemistry
Solid-gas interface
Surface physical chemistry
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Summary:Low-temperature dry oxidation of Si-capped and uncapped MBE-grown Si 0.8Ge 0.2, assisted by the UV radiation from a low-pressure Hg grid lamp, has been studied. For short processing times, the oxidation rate of Si 0.8Ge 0.2 was found to be a factor of 2–3 higher than that induced by the same method for elemental monocrystalline Si. After more than 80% of the initial thickness of the Si 0.8Ge 0.2 was oxidized, the growth rate of the oxide film approached that found for Si. The photo-oxidation rate of the Si capped layer was identical with that of single-crystal silicon. Because of the low temperature (550 °C) employed for this UV-assisted oxidation, no measurable relaxation of the strained layers was detected.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(92)90056-H