Atomic layer epitaxy

Atomic layer epitaxy (ALE) is a surface-controlled process for thin film manufacturing, for formation of atomically controlled surfaces and for epitaxial growth of single crystals. It is based on the saturation of individual, sequentially performed surface reactions between the substrate and each of...

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Bibliographic Details
Published in:Thin solid films 1992-08, Vol.216 (1), p.84-89
Main Author: Suntola, Tuomo
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Metals. Metallurgy
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Atomic layer epitaxy (ALE) is a surface-controlled process for thin film manufacturing, for formation of atomically controlled surfaces and for epitaxial growth of single crystals. It is based on the saturation of individual, sequentially performed surface reactions between the substrate and each of the reactants needed. The saturation mechanism of ALE sequences results in an inherent elimination of pinholes, conformal coating characteristics as well as in a thickness uniformity and homogeneity of the thin films produced. ALE is also an effective tool in a precise construction of superlattices, superalloys, tailored molecular structures and interface layers.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(92)90874-B