Selective electroless Ni deposition on a TiW underlayer for integrated circuit fabrication

• Published in: Thin solid films 1993-04, Vol.226 (1), p.87-93
• Main Authors: Dubin, V.M., Lopatin, S.D., Sokolov, V.G.
• Format: Article
• Language: English
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(93)90210-G

Selective electroless Ni deposition on a TiW underlayer has been investigated for contact hole filling, and pillar and conductor pattern formation in complementary metal-oxide-semiconductor technology. Very good contact hole filling to Si with a planar surface at the contact level was observed. Highly thermostable Si/TiW/Ni/TiW/AlSi metallization structures have been manufactured. The use of a TiW underlayer reduced contact resistance and increased thermostability. Ni pillars and Ni lines with 1 μm nominal sizes were manufactured by selective electroless Ni deposition on a TiW underlayer using a photoresist pattern as a deposited mask. The potential of using a selective metal deposition process to form the conductor pattern can dramatically simplify the fabrication of multilevel interconnections because the need for metal etching is eliminated.