Luminescence of spark-processed materials

High-frequency spark discharges were applied to the following semiconducting and semi-metallic materials: Sb, Bi, Sn, As, Ge, GaAs, Si, Te and Se. The spark-processed (sp) samples were characterized by photoluminescence (PL) measurements using an excitation wavelength of 325 nm. With the exception o...

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Bibliographic Details
Published in:Thin solid films 1995-01, Vol.255 (1), p.103-106
Main Authors: Ludwig, M.H., Hummel, R.E., Stora, M.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Elemental semiconductors and insulators
Exact sciences and technology
Luminescence
Nanostructures
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Silicon
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Summary:High-frequency spark discharges were applied to the following semiconducting and semi-metallic materials: Sb, Bi, Sn, As, Ge, GaAs, Si, Te and Se. The spark-processed (sp) samples were characterized by photoluminescence (PL) measurements using an excitation wavelength of 325 nm. With the exception of Se, PL signals in the visible region were obtained for all of the above-specified materials. The strongest and most stable PL was found in sp-Si and sp-Ge layers with peak wavelengths centred at 525 and 416 nm, respectively. The estimated increase of the bandgap energy due to the formation of nanocrystals was calculated using the effective mass approximation. The results are in accordance with the PL data. The particle sizes are expected to range from 3 to 8 nm. The findings support the quantum confinement model.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)05631-M