Optical second-harmonic generation studies of the structure of porous silicon surfaces

Characterization of porous silicon (PS) on the atomic scale is difficult and optical techniques offer certain advantages. High vacuum studies of PS by optical second-harmonic generation (SHG) are presented. Excitation wavelengths corresponding to a surface state and a suspected strain resonance from...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 1995-01, Vol.255 (1), p.146-148
Main Authors: Cavanagh, M., Power, J.R., McGilp, J.F., Münder, H., Berger, M.G.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Elemental semiconductors and insulators
Exact sciences and technology
Nanostructures
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Optical spectroscopy
Physics
Silicon
Surface structure
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Characterization of porous silicon (PS) on the atomic scale is difficult and optical techniques offer certain advantages. High vacuum studies of PS by optical second-harmonic generation (SHG) are presented. Excitation wavelengths corresponding to a surface state and a suspected strain resonance from clean Si surfaces are used. Hydrogen-terminated and clean surfaces of Si(100) and PS are compared. The H-terminated surfaces give no signal under the excitation conditions used. On desorbing the hydrogen, a stable SH signal is obtained from the PS which has a polarization behaviour consistent with a significant contribution from surfaces of {111} orientation.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)05641-P