Growth and characterization of polycrystalline InSe thin films

• Published in: Thin solid films 1995-03, Vol.258 (1-2), p.86-90
• Main Authors: Parlak, M., Erçelebi, Ç., Günal, I., Salaeva, Z., Allakhverdiev, K.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity; Electrical properties and measurements; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Iii-v semiconductors; Physics; Thermionic emission; Tunnelling
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(94)06398-2

Indium selenide films were obtained by the thermal evaporation of undoped crystals at substrate temperatures of 210 and 300 °C. Films were found to exhibit n-type conductivity. Scanning electron microscopy established that the films grown on glass substrates held at 210 °C had an atomic content of In46.66Se53.34, whereas the films obtained under the same conditions and annealed in vacuum at 150 °C had an atomic content of In48.13Se51.87. X-Ray diffraction indicated that the films were polycrystalline in nature and crystallized in the D13h space group. From an analysis of Hall and conductivity measurements, performed in the temperature ranges 110–320 K and 10–320 K respectively, thermionic emission is considered to be the predominant transport mechanism above 200 K. The current transport below 75 K is due to the hopping of carriers between localized states. In the intermediate temperature region, both thermally assisted tunnelling and thermionic emission contribute to the conduction.