Symmetry constraints and epitaxial growth on non-isomorphic substrate

Symmetry considerations discussed in the paper enable one to determine the constraints on single crystal growth in deposition on non-isomorphic substrates. Curie's law of symmetry is applied to the two-dimensional point symmetries of interfaces. The procedure described in the paper allows one t...

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Bibliographic Details
Published in:Thin solid films 1995-05, Vol.260 (1), p.111-117
Main Authors: Efimov, A.N., Lebedev, A.O.
Format: Article
Language:English
Subjects:
Anisotropy
Epitaxy
Heterostructures
Nucleation
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Summary:Symmetry considerations discussed in the paper enable one to determine the constraints on single crystal growth in deposition on non-isomorphic substrates. Curie's law of symmetry is applied to the two-dimensional point symmetries of interfaces. The procedure described in the paper allows one to draw strict conclusions about the possibility of single-crystal growth and the crystallographic orientation of the epilayer. An analysis of three heteroepitaxial systems — A3B5 nitride on sapphire, silicon on sapphire and A3B5 on spinel — serves to illustrate the theoretical approach. The results of this analysis generally agree with data published earlier. Possible causes of the discrepancies are discussed. It is shown that geometrical match is not the governing factor as far as epitaxy on non-isomorphic substrates is concerned.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)06425-3