Preparation of Si1-xGex thin crystalline films by pulsed excimer laser annealing of heavily Ge implanted Si

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Bibliographic Details
Published in:Thin solid films 1994-04, Vol.241 (1-2), p.155-158
Main Authors: REPPLINGER, F, FOGARASSY, E, GROB, A, GROB, J. J, MULLER, D, PREVOT, B, STOQUERT, J. P, DE UNAMUNO, S
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities: doping, implantation, distribution, concentration, etc
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(94)90417-0