Porous silicon multilayer optical waveguides

Optical waveguiding is demonstrated in porous silicon multilayers. Depth variations in porosity, and therefore refractive index, are achieved by switching between high and low current densities during the anodic etch process. Planar waveguiding has been demonstrated at λ = 1.28 μm. The wavelength ra...

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Bibliographic Details
Published in:Thin solid films 1996-04, Vol.276 (1-2), p.143-146
Main Authors: Loni, A, Canham, L.T, Berger, M.G, Arens-Fischer, R, Munder, H, Luth, H, Arrand, H.F, Benson, T.M
Format: Article
Language:English
Subjects:
Applied sciences
Electrochemistry
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Multilayers
Optical properties
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
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Summary:Optical waveguiding is demonstrated in porous silicon multilayers. Depth variations in porosity, and therefore refractive index, are achieved by switching between high and low current densities during the anodic etch process. Planar waveguiding has been demonstrated at λ = 1.28 μm. The wavelength range has been extended to the visible (λ = 0.6328 μm) by oxidising the samples to produce layered porous oxide structures. Two-dimensional strip-loaded waveguides have been produced, for both the visible and infrared, by etching into each top layer through a pre-deposited photolithographically-defined mask.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(95)08075-9