Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygen

Tantalum pentoxide (Ta 20 5) thin layers were grown on Si(100) by evaporation of Ta in an atomic oxygen plasma. The physical and electrical properties of 1000 Å-thick as-deposited films were evaluated. Films grown at 650 °C without the presence of the plasma (molecular oxygen) were oxygen-deficient...

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Bibliographic Details
Published in:Thin solid films 1996-08, Vol.281, p.415-418
Main Authors: Hudner, J., Hellberg, P.-E., Kusche, D., Ohlsén, H.
Format: Article
Language:English
Subjects:
Dielectric properties
Dielecttics
Evaporation
Plasma processing and deposition
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Summary:Tantalum pentoxide (Ta 20 5) thin layers were grown on Si(100) by evaporation of Ta in an atomic oxygen plasma. The physical and electrical properties of 1000 Å-thick as-deposited films were evaluated. Films grown at 650 °C without the presence of the plasma (molecular oxygen) were oxygen-deficient and poorly crystallized, whereas layers grown in the plasma (atomic oxygen) were stoichiometric (within 5%) and crystallized in the β-Ta 20 5 phase. A minimum flux of atomic oxygen during deposition, more than that required for growing films within 5% correct stoichiometry, was crucial for the suppression of the film leakage current. The electrical characterization of amorphous Ta 20 5 films grown at 400 °C resulted in I– V curves exhibiting an ohmic behaviour at low electric fields,
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(96)08667-1