Matrix dependent Auger peak shifts and the oxidation of GaAs

Ranke and Jacobi 1 observed significant shifts in energy (‘somewhat less than 5 eV’) of the Ga LMM core-core Auger transition, and a marked change in peak shape, upon oxidation of GaAs. A variety of oxidized GaAs surfaces (anodic, 3:1:1 etched, UHV oxidised) have been studied by depth profiling and...

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Bibliographic Details
Published in:Vacuum 1976, Vol.26 (10), p.437-437
Main Authors: Todd, CJ, Heckingbottom, R, Ashwell, GWB
Format: Article
Language:English
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Summary:Ranke and Jacobi 1 observed significant shifts in energy (‘somewhat less than 5 eV’) of the Ga LMM core-core Auger transition, and a marked change in peak shape, upon oxidation of GaAs. A variety of oxidized GaAs surfaces (anodic, 3:1:1 etched, UHV oxidised) have been studied by depth profiling and associated techniques, in both 4-grid and CMA Auger spectrometers, to specify these matrix induced effects on the Auger transitions more precisely, and to deduce from them changes in the local chemical environment. The main results of this study are summarised as follows. 1. 1. Under typical modulation conditions required for 4-grid analysis of weak Ga LMM transitions (ie > 10 eV peak to peak) modulation distortion occurs resulting in enhanced shifts up to 5 eV, and peak shape changes similar to those observed by Ranke and Jacobi 1, 1975. 2. 2. In the absence of modulation distortion (
ISSN:0042-207X
1879-2715
DOI:10.1016/0042-207X(76)90218-9