DC conduction through UHV deposited tellurium films

The conduction characteristics of thin films of tellurium deposited between gold electrodes on an ultasonically cleaned non-alkaline Corning 7059 glass substrate in a relative oxygen-free 10 −9 mbar vacuum at 125 K have been investigated. The results show that for applied electric field of 10 8 Vm −...

Full description

Saved in:
Bibliographic Details
Published in:Vacuum 1996-02, Vol.47 (2), p.129-131
Main Authors: Swan, R, Ray, AK, Travis, JR, Evans, K
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The conduction characteristics of thin films of tellurium deposited between gold electrodes on an ultasonically cleaned non-alkaline Corning 7059 glass substrate in a relative oxygen-free 10 −9 mbar vacuum at 125 K have been investigated. The results show that for applied electric field of 10 8 Vm −1, the films exhibit stable but low ohmic conductance 0.25 mS of but for higher field the characteristics display non-linearity and hysteresis.
ISSN:0042-207X
1879-2715
DOI:10.1016/0042-207X(95)00224-3