Hydrogenated amorphous silicon deposited by ion-beam sputtering

Hydrogenated amorphous silicon films 1 2 to 1 μm thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/cm 2 beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure 3 in. (7.6 cm) single crystal wafer, while the hydrog...

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Bibliographic Details
Published in:Solar energy materials 1981, Vol.4 (2), p.113-118
Main Authors: Lowe, V.E., Henin, N., Tu, C.-W., Tavakolian, H., Sites, J.R.
Format: Article
Language:English
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Summary:Hydrogenated amorphous silicon films 1 2 to 1 μm thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/cm 2 beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure 3 in. (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.
ISSN:0165-1633
DOI:10.1016/0165-1633(81)90035-6