Mixed oxide of ruthenium and titanium as a protective film material for silicon anodes in photoelectrochemical cells

The photoelectrochemical behaviour of an Si anode coated with a film of mixed oxide of ruthenium and titanium (ORT) is studied in the reaction of photodecomposition of KCl and HCl solutions. Single-crystalline uniformly doped n-type silicon, as well as with p-n junction, was used as a substrate. The...

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Bibliographic Details
Published in:Solar energy materials 1991-07, Vol.22 (2), p.119-126
Main Authors: Pleskov, Yu.V., Kraitsberg, A.M., Kolbasov, G.Ya, Taranenko, N.I., Lipyavka, V.G.
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:The photoelectrochemical behaviour of an Si anode coated with a film of mixed oxide of ruthenium and titanium (ORT) is studied in the reaction of photodecomposition of KCl and HCl solutions. Single-crystalline uniformly doped n-type silicon, as well as with p-n junction, was used as a substrate. The film is shown to protect the Si electrode against photocorrosion during the photoelectrolysis of the above solutions. The heights of the Schottky barrier at the n-Si/ORT contact is theoretically estimated using photoelectrochemical data to be up to 0.9 eV. The efficiency of a real electrode with Schottky barrier is significantly lower than the predicted value due to the destructive influence of a resistant interlayer formed during ORT film application to the silicon surface. The resistant interlayer formation may be prevented by implanting the silicon surface layer with boron, hence, by using an electrode with an n-Si/p +-Si junction as substrate. The efficiency of conversion of light energy into chemical energy in the n-Si/p +-Si/ORT/30% HCl/Pt cell is 6%.
ISSN:0165-1633
DOI:10.1016/0165-1633(91)90011-9