Local dependence of electron lifetime in amorphous Si devices with pin-structure

On the basis of the delayed collection field experiment, a new evaluation method is presented which allows the determination of the electron lifetime τ as a function of the local position x through the i-layer. The theory indicates that in principle the lifetime τ(x) and the built-in field F i (x) c...

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Bibliographic Details
Published in:Solar energy materials 1991-12, Vol.23 (2), p.282-288
Main Authors: Dietrich, K., Karg, F.H., Krühler, W.
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:On the basis of the delayed collection field experiment, a new evaluation method is presented which allows the determination of the electron lifetime τ as a function of the local position x through the i-layer. The theory indicates that in principle the lifetime τ(x) and the built-in field F i (x) can be determined separately. First measurements show that the carrier lifetime is significantly reduced at the p/i interface ( τ i = 10 ns ). The region of low τ expands less than 400 nm into the i-layer. The value of the bulk lifetime ( τ b = 0.9 μ s ) confirms previous results. In the degraded state, the region of low lifetime is expanded deeper into the i-layer (∼ 900 nm).
ISSN:0165-1633
DOI:10.1016/0165-1633(91)90131-4