Ionization probability of the bound impurity states of two-dimensional electrons under strong magnetic and finite electric fields

The ionization probability of the bound impurity states in a semiconductor inversion layer under strong magnetic fields H is calculated as a function of temperature and electric field value E. The conditions for relatively large ionization probability are determined. The possibility of the bound sta...

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Bibliographic Details
Published in:Surface science letters 1984-04, Vol.139 (1), p.L185-L189
Main Authors: Grebenschikov, Yu.B., Ulinich, F.R., Usov, N.A.
Format: Article
Language:English
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Summary:The ionization probability of the bound impurity states in a semiconductor inversion layer under strong magnetic fields H is calculated as a function of temperature and electric field value E. The conditions for relatively large ionization probability are determined. The possibility of the bound state ionization must be taken into account for the interpretation of the inversion layer properties at the Shubnikov-De Haas conductivity minima.
ISSN:0167-2584
DOI:10.1016/0167-2584(84)90427-4