High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductors

We have investigated the atomic structures of displacement cascades and amorphous-crystalline interfaces in silicon, ion implanted at 4 K, using high-resolution electron microscopy. The nature of the cascades and the process of amorphization are shown to be strong functions of ion-implantation and s...

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Bibliographic Details
Published in:Materials letters 1984, Vol.2 (3), p.211-218
Main Authors: Narayan, J., Fathy, D., Oen, O.S., Holland, O.W.
Format: Article
Language:English
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Summary:We have investigated the atomic structures of displacement cascades and amorphous-crystalline interfaces in silicon, ion implanted at 4 K, using high-resolution electron microscopy. The nature of the cascades and the process of amorphization are shown to be strong functions of ion-implantation and substrate variables. At 4 K the specific damage energy density for the crystalline to amorphous phase transition in silicon has been determined to be 12 eV/atom. The details of atomic structures of amorphous silicon and amorphous-crystalline interfaces are presented. The calculations of the mean free path between collisions and the energy deposited per atom are found to be consistent with experimental observations on amorphization of silicon.
ISSN:0167-577X
1873-4979
DOI:10.1016/0167-577X(84)90026-0