Indium transients in the growth of InGaAs by metal-organic chemical vapor deposition

A study of indium transients in the growth of InGaAs-AlGaAs and InGaAs-GaAs heterostructures is described for samples grown by atmospheric-pressure metal-organic chemical vapor deposition (MOCVD) using trimethylindium (TMIn) and an interrupted growth process. No evidence of large compositional trans...

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Bibliographic Details
Published in:Materials letters 1988-07, Vol.6 (11), p.409-412
Main Authors: Fernández, G.E., Bryan, R.P., York, P.K., Coleman, J.J.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:A study of indium transients in the growth of InGaAs-AlGaAs and InGaAs-GaAs heterostructures is described for samples grown by atmospheric-pressure metal-organic chemical vapor deposition (MOCVD) using trimethylindium (TMIn) and an interrupted growth process. No evidence of large compositional transients and rapid decays in the indium signal are observed in analysis of secondary ion mass spectrometry (SIMS) and sputtered neutral mass spectrometry (SNMS) data taken at the interfaces of both InGaAs-GaAs strained-layer superlattice structures and InGaAs-AlGaAs laser structures.
ISSN:0167-577X
1873-4979
DOI:10.1016/0167-577X(88)90041-9