Epitaxial growth of Si on Er-implanted Si substrates

The quality of MBE Si layers grown on Er-implanted Si substrates was studied. Depending on the implantation parameters, the sample presents a damaged surface. For high doses, an amorphization of the surface occurs. In this case, the epitaxial layers have a certain degree of polycrystallinity. This w...

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Bibliographic Details
Published in:Materials letters 1990, Vol.9 (2), p.57-59
Main Authors: Moutonnet, D., L'Haridon, H., Favennec, P.N., Salvi, M., D'Avitaya, F.Arnaud, Chroboczek, J., Campidelli, Y.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The quality of MBE Si layers grown on Er-implanted Si substrates was studied. Depending on the implantation parameters, the sample presents a damaged surface. For high doses, an amorphization of the surface occurs. In this case, the epitaxial layers have a certain degree of polycrystallinity. This was confirmed by the LEED diagrams and SEM observations.
ISSN:0167-577X
1873-4979
DOI:10.1016/0167-577X(90)90151-B