Silicon etched-groove permeable base transistor fabrication with cutoff frequencies ( f T, f max) above 25 GHz

We report the fabrication of etched-groove silicon permeable base transistors (PBTs) with mushroom-shaped 0.2–0.4 μm wide source fingers. This structure enables both the passivation of the Si finger sidewalls and the reinforcement of the platinum gate with a gold overlayer. The low base resistance a...

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Bibliographic Details
Published in:Microelectronic engineering 1991-10, Vol.15 (1), p.27-30
Main Authors: Gruhle, A., Badoz, P.A., Chevalier, F., Halimaoui, A., Lalanne, F., Mouis, M., Regolini, J.L., Vincent, G., Bensahel, D.
Format: Article
Language:English
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Summary:We report the fabrication of etched-groove silicon permeable base transistors (PBTs) with mushroom-shaped 0.2–0.4 μm wide source fingers. This structure enables both the passivation of the Si finger sidewalls and the reinforcement of the platinum gate with a gold overlayer. The low base resistance and the optimized doping profile yielded devices with f T and f max values up to 26 GHz.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(91)90176-E