Rapid thermal annealing of metastable and stable Si/Si1−xGex heterojunction bipolar transistors

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Bibliographic Details
Published in:Microelectronic engineering 1991-10, Vol.15 (1-4), p.135-138
Main Authors: Shafi, Z.A., Martin, A.S.R., Whitehurst, J., Ashburn, P., Godfrey, D.J., Gibblings, C.J., Post, I.R.C., Tuppen, C.G., Booker, G.R., Jones, M.E.
Format: Article
Language:English
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ISSN:0167-9317
DOI:10.1016/0167-9317(91)90198-M