E-beam written optically transparent x-ray masks: Four levels for an industrial VLSI chip with megabit design rules

For the acceptance of X-ray lithography in an industrial environment not only the high resolution and accuracy capabilities have to be demonstrated, but also the compability of the X-ray related processes with up to date requirements on complexity and integration of VLSI devices. To achieve this we...

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Bibliographic Details
Published in:Microelectronic engineering 1992, Vol.17 (1), p.161-165
Main Authors: Ehrlich, Ch, Breithaupt, B., Demmeler, R., Jacobs, E.P., Köhler, C., Kohlmann, K., Petschner, M., Reimer, K.
Format: Article
Language:English
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Summary:For the acceptance of X-ray lithography in an industrial environment not only the high resolution and accuracy capabilities have to be demonstrated, but also the compability of the X-ray related processes with up to date requirements on complexity and integration of VLSI devices. To achieve this we improved our running mask technology by developing a manufacturing process for e-beam written X-ray masks for direct use in an optically aligning X-ray stepper. This mask concept was applied in a joint project with an industrial partner in which the four final lithographic steps in a VLSI CMOS fabrication were performed by means of X-ray lithography.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(92)90033-N