Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with Er

We demonstrate sharp room-temperature electroluminescence at 1.54 μm due to intra-4f transitions of Er 3+ in semi-insulating polycrystalline silicon (SIPOS) implanted with Er and annealed for implant damage recovery. Our measurements refer to SIPOS containing ≈ 30 at.% O, doped with Er to concentrat...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1995-03, Vol.96 (1), p.378-381
Main Authors: Lombardo, S., Campisano, S.U., van den Hoven, G.N., Polman, A.
Format: Article
Language:English
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Summary:We demonstrate sharp room-temperature electroluminescence at 1.54 μm due to intra-4f transitions of Er 3+ in semi-insulating polycrystalline silicon (SIPOS) implanted with Er and annealed for implant damage recovery. Our measurements refer to SIPOS containing ≈ 30 at.% O, doped with Er to concentrations of about 1 at.% and annealed at a temperature in the 400–1100°C range. The luminescence has been excited either by optically pumping with an Ar laser or by biasing suitable metal-SIPOS-p + silicon devices.
ISSN:0168-583X
1872-9584
DOI:10.1016/0168-583X(94)00523-0