Hydrogen effects on the electrical and optical properties of γ-irradiated n-type GaAs epilayers

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996, Vol.108 (1), p.65-69
• Main Authors: Ulyashin, A.G, Bumai, Yu.A, Shlopak, N.V, Sobolev, N.A, Prokhorenko, T.A
• Format: Article
• Language: English
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/0168-583X(95)00859-4

The effects of γ-irradiation on sulphur-doped VPE-grown GaAs epilayers exposed to a hydrogen plasma have been investigated by low temperature photoluminescence (PL). Hall effect and conductivity measurements. It is shown that hydrogen incorporated into the samples from a plasma prior to γ-irradiation leads to significant changes in complex formation in n-type GaAs. PL measurements indicate that the presence of hydrogen in n-type GaAs hinders the interaction of residual C A, acceptors with interstitial As atoms. Electrical measurements show a γ-induced decay of shallow donor-hydrogen complexe in hydrogenated n-type GaAs layers. In contrast to hydrogenated n-type Si, no increase of radiation hardness with respect to electrical parameters of n-type GaAs subjected to hydrogenation and subsequent annealing at 390°C has been observed.