Total reflection PIXE (TPIXE) and RBS for surface and trace element analysis

MeV proton and α beams at small incident angles (0–35 mrad) were used to analyse flat surfaces such as Si wafers and coated quartz substrates. X-rays and backscattered particles were detected in a total reflection geometry. Using TPIXE a quick and simultaneous detection of different trace elements w...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996-04, Vol.109, p.85-93
Main Authors: van Kan, J.A., Vis, R.D.
Format: Article
Language:English
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Summary:MeV proton and α beams at small incident angles (0–35 mrad) were used to analyse flat surfaces such as Si wafers and coated quartz substrates. X-rays and backscattered particles were detected in a total reflection geometry. Using TPIXE a quick and simultaneous detection of different trace elements was established. At very small incident angles of a few mrad, it was observed that the RBS yield drops faster than the X-ray yield, which indicates surface channelling.
ISSN:0168-583X
1872-9584
DOI:10.1016/0168-583X(95)00890-X