Investigation of the damage induced by 200 keV Ge + ion implantation in 6HSiC

Investigations of damage induced by 200 keV Ge + ion implantation into 6HSiC have been carried out to characterize 3 different levels of damage in respect of the irradiation dose. Up to now, mainly vacancy-type defects and dislocations have been identified. High diffusion of defects, and chemical d...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996-05, Vol.112 (1), p.321-324
Main Authors: Pacaud, Y., Skorupa, W., Perez-Rodriguez, A., Brauer, G., Stoemenos, J., Barklie, R.C.
Format: Article
Language:English
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Summary:Investigations of damage induced by 200 keV Ge + ion implantation into 6HSiC have been carried out to characterize 3 different levels of damage in respect of the irradiation dose. Up to now, mainly vacancy-type defects and dislocations have been identified. High diffusion of defects, and chemical disorder in amorphized layer, have been observed in this study.
ISSN:0168-583X
1872-9584
DOI:10.1016/0168-583X(95)01006-8