Rutherford backscattering study of thin oxide layers prepared by reactive magnetron sputtering

Ferromagnetic/oxide junctions ( Si/NiFe 60 A ̊ /Al 2O 3 t/ Co 65 A ̊ with t from 0 to 200 Å and Si/NiFe 60 A ̊ /MgO t/ Co 65 A ̊ with t from 0 to 160 Å) were prepared by reactive magnetron sputtering in a mixed Ar O 2 atmosphere. The growth process and the oxygen content of each layer were studied b...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996-09, Vol.118 (1), p.626-629
Main Authors: Barradas, N.P., Soares, J.C., da Silva, M.F., Plaskett, T.S., Freitas, P.P.
Format: Article
Language:English
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Summary:Ferromagnetic/oxide junctions ( Si/NiFe 60 A ̊ /Al 2O 3 t/ Co 65 A ̊ with t from 0 to 200 Å and Si/NiFe 60 A ̊ /MgO t/ Co 65 A ̊ with t from 0 to 160 Å) were prepared by reactive magnetron sputtering in a mixed Ar O 2 atmosphere. The growth process and the oxygen content of each layer were studied by Rutherford backscattering spectroscopy. For the first 20 Å of oxide growth a progressive oxidation of the NiFe layer is observed. As the oxide deposition continues, stoichiometric Al 2O 3 and MgO layers are formed, while the NiFe layer remains unchanged.
ISSN:0168-583X
1872-9584
DOI:10.1016/0168-583X(95)01079-3