The initial stage of Pb thin film growth on Si(111) surface studied by TOF-ICISS

We have investigated about the initial stage of Pb film growth on Si(111) surfaces at room temperature by using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS). In this study, we have found that Pb film grows following the Stranski-Krastanov mode (2 dimensional layer + 3 dime...

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Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996-09, Vol.118 (1), p.530-532
Main Authors: Tanaka, Yasunori, Morishita, Hideki, Ryu, Juang-Tak, Katayama, Itsuo, Oura, Kenjiro
Format: Article
Language:English
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Summary:We have investigated about the initial stage of Pb film growth on Si(111) surfaces at room temperature by using time-of-flight impact collision ion scattering spectroscopy (TOF-ICISS). In this study, we have found that Pb film grows following the Stranski-Krastanov mode (2 dimensional layer + 3 dimensional islands) at room temperature and the saturation coverage of the 2D layer is about 1.0 ML, and after completion of the 2D layer, Pb crystallite grows with the orientation of Pb(111) [01 1 ]∥Si(111)[01 1 ].
ISSN:0168-583X
1872-9584
DOI:10.1016/0168-583X(95)01104-8