Influence of sample thickness on carrier lifetime modification induced by 4 MeV proton implantation in silicon

Low dose irradiation with 4 MeV protons was used for lifetime modification in Si. The depth dependence of the induced effect was investigated by Microwave Photoconductive Decay (μ-PCD) technique. By adopting a special sample structure it was possible to distinguish effects on lifetime caused by impl...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996-05, Vol.112 (1), p.173-176
Main Authors: Biró, L.P., Gyulai, J., Khanh, N.Q., Tüttő, P.
Format: Article
Language:English
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Summary:Low dose irradiation with 4 MeV protons was used for lifetime modification in Si. The depth dependence of the induced effect was investigated by Microwave Photoconductive Decay (μ-PCD) technique. By adopting a special sample structure it was possible to distinguish effects on lifetime caused by implantation defects and by carrier diffusion in the undamaged Si underneath. Limits are given when μ-PCD is applied to measure lifetime changes set by deep implants.
ISSN:0168-583X
1872-9584
DOI:10.1016/0168-583X(95)01228-1