Loading…
Ultra-shallow junction formation in silicon using ion implantation
Extensive studies have been conducted in the semi-empirical and physically-based Monte Carlo modeling of low energy As, BF 2, and B implants into (100) silicon as a function of energy, implant angle, dose, and dose rate. In addition, these models are believed to provide reasonable predictions for th...
Saved in:
Published in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996-05, Vol.112 (1), p.177-183 |
---|---|
Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Extensive studies have been conducted in the semi-empirical and physically-based Monte Carlo modeling of low energy As, BF
2, and B implants into (100) silicon as a function of energy, implant angle, dose, and dose rate. In addition, these models are believed to provide reasonable predictions for the damage profiles. We have fabricated ultra-shallow (60 nm)
P
+
N
junctions by low energy (5 keV) BF
2 implantation into Si, in which the implant dose
rate (in addition to dose and energy) is optimized, followed by multi-step rapid thermal annealing (RTA). |
---|---|
ISSN: | 0168-583X 1872-9584 |
DOI: | 10.1016/0168-583X(95)01246-X |