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Ultra-shallow junction formation in silicon using ion implantation

Extensive studies have been conducted in the semi-empirical and physically-based Monte Carlo modeling of low energy As, BF 2, and B implants into (100) silicon as a function of energy, implant angle, dose, and dose rate. In addition, these models are believed to provide reasonable predictions for th...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996-05, Vol.112 (1), p.177-183
Main Authors: Tasch, A.F., Banerjee, S.K.
Format: Article
Language:English
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Summary:Extensive studies have been conducted in the semi-empirical and physically-based Monte Carlo modeling of low energy As, BF 2, and B implants into (100) silicon as a function of energy, implant angle, dose, and dose rate. In addition, these models are believed to provide reasonable predictions for the damage profiles. We have fabricated ultra-shallow (60 nm) P + N junctions by low energy (5 keV) BF 2 implantation into Si, in which the implant dose rate (in addition to dose and energy) is optimized, followed by multi-step rapid thermal annealing (RTA).
ISSN:0168-583X
1872-9584
DOI:10.1016/0168-583X(95)01246-X