Radiation damage studies of field plate and p-stop n-side silicon microstrip detectors

We present results from studies of the properties of dedicated n-side microstrip structures before and after irradiation, with photons to 7 Mrad and fast neutrons to 8 × 10 13ncm −2. Both p-stop and field plate devices were investigated, each having a range of strip geometries in order to determine...

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Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 1995-08, Vol.362 (2), p.297-314
Main Authors: Matheson, J, Moser, H.-G, Roe, S, Weilhammer, P, Moszczynski, S, Dabrowski, W, Grybos, P, Idzik, M, Skoczen, A, Gill, K, Hall, G, MacEvoy, B, Vitè, D, Wheadon, R, Allport, P, Green, C, Richardson, J, Apsimon, R, Evensen, L, Avset, B, Giubellino, P, Ramello, L
Format: Article
Language:English
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Summary:We present results from studies of the properties of dedicated n-side microstrip structures before and after irradiation, with photons to 7 Mrad and fast neutrons to 8 × 10 13ncm −2. Both p-stop and field plate devices were investigated, each having a range of strip geometries in order to determine optimal configurations for long-term viability and performance.
ISSN:0168-9002
1872-9576
DOI:10.1016/0168-9002(95)00076-3