Measurements on a GaAs microstrip detector with 50 GeV/ c electrons

A microstrip gallium arsenide detector (thickness 508 μm, strip width 100 μm, strip pitch and readout pitch 200 μm) has been tested in a 50 GeV/ c electron beam at CERN. Using the low noise Viking preamplifier chip (shaping time ∼1.5 μs) signal to noise ratios up to 25 were measured depending on bia...

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Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 1996-02, Vol.370 (2), p.377-380
Main Authors: Braunschweig, W., Karpinski, W., Kubicki, Th, Lübelsmeyer, K., Ortmanns, J., Pandoulas, D., Pierschel, G., Rente, C., Siedling, R., Syben, O., Tenbusch, F., Toporowsky, M., Wilms, Th, Wittmer, B., Xiao, W.J.
Format: Article
Language:English
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Summary:A microstrip gallium arsenide detector (thickness 508 μm, strip width 100 μm, strip pitch and readout pitch 200 μm) has been tested in a 50 GeV/ c electron beam at CERN. Using the low noise Viking preamplifier chip (shaping time ∼1.5 μs) signal to noise ratios up to 25 were measured depending on bias voltage and angle of incidence. Applying the so-called η-algorithm (using the impact position-sensitive charge sharing between adjacent strips) a resolution down to σ ∼ 20 μm could be obtained.
ISSN:0168-9002
1872-9576
DOI:10.1016/0168-9002(95)00706-7