Iodine-doping effects on the hetero-epitaxial growth of ZnS on GaP substrate using VPE method

Growth behavior and characterizations of hetero-epitaxially grown ZnS on GaP(100) substrates are given. Epitaxial growth was undertaken by the VPE method with iodine doping. A remarkable increase in the growth rate of ZnS layers together with a marked lowering of growth temperature, by about 200°C,...

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Bibliographic Details
Published in:Applied surface science 1988-09, Vol.33, p.654-660
Main Authors: Imai, Tetsuji, Fuke, Shunro, Kasai, Kunihiro, Kuwahara, Kazuhiro
Format: Article
Language:English
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Summary:Growth behavior and characterizations of hetero-epitaxially grown ZnS on GaP(100) substrates are given. Epitaxial growth was undertaken by the VPE method with iodine doping. A remarkable increase in the growth rate of ZnS layers together with a marked lowering of growth temperature, by about 200°C, at the maximum growth rate were found to result from the addition of iodine gas to the reactant species. Considerable improvements of surface morphology and the crystallinity were also observed as a result of the iodine doping. Moreover, the coherent growth of ZnS layers on GaP(100) substrates was strongly indicated from the X-ray analyses data.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(88)90365-0