Heteroepitaxy of metallic and semiconducting silicides on silicon

Recent developments in the epitaxial growth of metallic and semiconducting silicides on silicon are reviewed. The structural, electronic and electrical properties of these silicide-silicon interfaces are examined with the aid of results obtained with a large variety of in-situ and ex-situ surface te...

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Bibliographic Details
Published in:Applied surface science 1990-01, Vol.41-42, p.241-252
Main Authors: Cherief, N., Cinti, R., De Crescenzi, M., Derrien, J., Nguyen Tan, T.A., Veuillen, J.Y.
Format: Article
Language:English
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Summary:Recent developments in the epitaxial growth of metallic and semiconducting silicides on silicon are reviewed. The structural, electronic and electrical properties of these silicide-silicon interfaces are examined with the aid of results obtained with a large variety of in-situ and ex-situ surface techniques. The paper will focus on two topics: (i) recent progress on the epitaxial growth of thin metallic CoSi2 films on Si(111), (ii) epitaxial growth of thin semiconducting β-FeSi2 films on Si(111), (100) and (100) vicinal faces.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(89)90064-0