Kinetics of dry oxidation of silicon

The kinetics of dry oxidation of silicon is modeled in terms of ionic growth retarded by internal fields. It is described in terms of the classical theory of Wagner for the oxidation of metals. First it is shown that the growth curves for dry oxidation follow a power law rather than a linear-parabol...

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Bibliographic Details
Published in:Applied surface science 1989-10, Vol.39 (1), p.81-88
Main Authors: Wolters, D.R., Zegers-Van Duynhoven, A.T.A.
Format: Article
Language:English
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Summary:The kinetics of dry oxidation of silicon is modeled in terms of ionic growth retarded by internal fields. It is described in terms of the classical theory of Wagner for the oxidation of metals. First it is shown that the growth curves for dry oxidation follow a power law rather than a linear-parabolic law. The power law is derived by implementing the logarithmic kinetics of oxidation-induced space charge in the exponential field dependence of ionic transport. It is made plausible that the space charge density is sufficiently high to affect ionic transport. A number of phenomena is easily explained with this model: e.g. the orientation dependence, the cross-over the, non-linear oxygen pressure dependence, the temperature dependence and the two-dimensional effects on the growth. As a practical application the model predicts structral thin regions in the oxide on locations with non-homogeneous fields.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(89)90421-2