Parallel oxidation model for Si including both molecular and atomic oxygen mechanisms

Several key experimental results are not successfully explained by current models for the thermal oxidation of Si in dry O 2. The three issues we consider here are (1) the sublinear pressure dependence of the oxidation rate for thin oxides, (2) the formation of oxide on the outer SiO 2 surface durin...

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Bibliographic Details
Published in:Applied surface science 1989-10, Vol.39 (1), p.89-102
Main Authors: Delarios, J.M., Helms, C.R., Kao, D.B., Deal, B.E.
Format: Article
Language:English
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Summary:Several key experimental results are not successfully explained by current models for the thermal oxidation of Si in dry O 2. The three issues we consider here are (1) the sublinear pressure dependence of the oxidation rate for thin oxides, (2) the formation of oxide on the outer SiO 2 surface during the “initial fast process”, and (3) the effect of gas phase/SiO 2 surface mechanisms on oxidation kinetics. We develop a parallel oxidation model with specific physical mechanisms related to the above phenomena. This model is fit to oxidation thickness versus time data for an extensive data set for thicknesses between 6 nm and 1 ωm.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(89)90422-4