Continuous roughness characterization from atomic to micron distances: Angle-resolved electron and photon scattering

The roughness at the Si/SiO 2 interface has been characterized by two methods independently: Spot profile analysis of LEED (SPA-LEED) provides information on an atomic scale up to lateral distances of some 100 mm, and angle-resolved light scattering (ARLS) extends the range into the region of many m...

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Bibliographic Details
Published in:Applied surface science 1989-10, Vol.39 (1), p.457-472
Main Authors: Pietsch, G.J., Henzler, M., Hahn, P.O.
Format: Article
Language:English
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Summary:The roughness at the Si/SiO 2 interface has been characterized by two methods independently: Spot profile analysis of LEED (SPA-LEED) provides information on an atomic scale up to lateral distances of some 100 mm, and angle-resolved light scattering (ARLS) extends the range into the region of many microns. For samples prepared at optimum by chemo-mechanical polishing the same geometric distribution of atomic steps describes the results with both methods pointing to one common mechanism of roughness production. For less optimized samples or for regularities in the micron scale due to misorientation additional information is available from light scattering. As an example, the influence of oxidation or different final polishing processes is demonstrated.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(89)90462-5