Characterization of III–V compounds by quasi-elastic electronic scattering of light

Quasi-elastic light scattering from individual electron single-particle excitations is observed experimentally and studied theoretically in n-GaAs and n-InP samples with nonparabolic dispersion of energy bands for a wide range of free-electron concentrations varying from ≈10 8 to ≈10 19 cm -3. The r...

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Bibliographic Details
Published in:Applied surface science 1991-06, Vol.50 (1), p.300-302
Main Authors: Bairamov, B.H., Voitenko, V.A., Ipatova, I.P., Toporov, V.V., Irmer, G., Monecke, J., Jahne, E.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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Summary:Quasi-elastic light scattering from individual electron single-particle excitations is observed experimentally and studied theoretically in n-GaAs and n-InP samples with nonparabolic dispersion of energy bands for a wide range of free-electron concentrations varying from ≈10 8 to ≈10 19 cm -3. The results indicate that the scattering mechanisms associated with charge-, spin- and momentum-density fluctuations are represented by different light scattering line shapes and occur in different concentration ranges.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(91)90186-N