Mechanisms of He (2 1S) de-excitation on oxygen-adsorbed Si(100) surfaces

Si(100) surfaces exposed to O 2 were studied using metastable de-excitation spectroscopy. In the case of a low exposure to O 2 (< 10 L), a He *(2 1S) metastable electron is transferred from the excited atom into an empty resonant level of the Si surface, forming a He ion. Electron emission them o...

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Bibliographic Details
Published in:Applied surface science 1991, Vol.48, p.143-146
Main Authors: Hongo, Shozo, Urano, Toshio, Kanaji, Toru
Format: Article
Language:English
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Summary:Si(100) surfaces exposed to O 2 were studied using metastable de-excitation spectroscopy. In the case of a low exposure to O 2 (< 10 L), a He *(2 1S) metastable electron is transferred from the excited atom into an empty resonant level of the Si surface, forming a He ion. Electron emission them occurs by subsequent Auger neutralization of the He ion at the surface. When it is exposed to much O 2, some layers of the Si surface are oxidized, changing into insulator SiO 2. Then the de-excitation of the metastable state takes place through the Penning ionization prosess. When even one layer of K is adsorbed on the Si surface, oxygen atoms are easily captured by this system, and the Si surface changes into SiO 2 easily.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(91)90320-J