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Effective temperature of products in laser evaporation and desorption

The evaporation of a silicon film oxidized in water was investigated by means of time-of-flight spectroscopy. A substantial difference in the effective temperature of desorption (i.e. the one determined from the time-of-flight spectrum) was revealed for SiO (≈ 6000 K) and H 2 (≈ 500 K). Numerical si...

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Bibliographic Details
Published in:Applied surface science 1991, Vol.48, p.198-203
Main Authors: Ukraintsev, V.A., Chernov, A.A., Mezhuyev, A.N., Podolsky, B.S.
Format: Article
Language:English
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Summary:The evaporation of a silicon film oxidized in water was investigated by means of time-of-flight spectroscopy. A substantial difference in the effective temperature of desorption (i.e. the one determined from the time-of-flight spectrum) was revealed for SiO (≈ 6000 K) and H 2 (≈ 500 K). Numerical simulations were performed for the processes of laser evaporation and desorption and the case of the products travelling with collisions was analyzed. It was established that even for thermal laser evaporation and desorption the effective temperature of the products can differ significantly from the maximum temperature of the surface.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(91)90330-M