An XPS study of thin Pt and Ir silicide overlayer formation on Si(100)2 X 1 surfaces

The formation of thin (5–100Å) platinum and iridium silicide films on the clean Si(100)2 X 1 surface has been studied using XPS. A detailed analysis of the Si 2p and Pt/Ir 4f core-level photoemission lineshapes has allowed the determination of the phase formation sequence, and the resulting change i...

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Bibliographic Details
Published in:Applied surface science 1992, Vol.56, p.493-500
Main Authors: Morgan, S.J., Williams, R.H., Mooney, J.M.
Format: Article
Language:English
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Summary:The formation of thin (5–100Å) platinum and iridium silicide films on the clean Si(100)2 X 1 surface has been studied using XPS. A detailed analysis of the Si 2p and Pt/Ir 4f core-level photoemission lineshapes has allowed the determination of the phase formation sequence, and the resulting change in Schottky barrier height, with annealing. Progressively silicon-rich silicides were formed with increasing annealing temperature. At annealing temperatures > 600°C rapid outdiffusion of silicon atoms onto the surface occurred. Small changes in relative Schottky barrier height were observed for different silicide phases, with the monosilicide phases PtSi and IrSi giving the lowest barriers on p-type Si.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(92)90277-5