Current stochasticity of field emission of charge from traps in the transition layer of implanted MIS structures

The field emission of charge from shallow traps at the Si/SiO 2 interface of the AlSiO 2pSinSi MIS structure has been studied in the temperature range from 6 to 100 K. Two temperature regions have been found in which the stochasticity of the emission current is observed: T < 14 K and 25 < T...

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Bibliographic Details
Published in:Applied surface science 1992, Vol.59 (2), p.91-94
Main Authors: Gomeniuk, Yu.V., Litovski, R.N., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Exact sciences and technology
Field emission, ionization, evaporation, and desorption
Physics
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Summary:The field emission of charge from shallow traps at the Si/SiO 2 interface of the AlSiO 2pSinSi MIS structure has been studied in the temperature range from 6 to 100 K. Two temperature regions have been found in which the stochasticity of the emission current is observed: T < 14 K and 25 < T < 50 K. The stochastic component of the emission current in the second temperature region is caused by an increase of the electric field at the Si/SiO 2 interface due to a reduction of the space-charge region when substrate donors and p-layer acceptors are thermally activated.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(92)90292-6