REM study of surface electromigration of Ge, Au Cu and Ag on Si(111) surfaces

Surface electromigration of Ge, Au Cu and Ag on Si(111) surfaces was studied by reflection electron microscopy. Ge moves in a direction parallel to the DC current. The facts that Au and Cu move in opposite directions and that Au and Cu coadsorbed on Si(111) form the 2D ordered √3 × √3 structure sugg...

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Bibliographic Details
Published in:Applied surface science 1992, Vol.60, p.79-84
Main Authors: Yamaguchi, Hiroi, Tanishiro, Yasumasa, Yagi, Katsumichi
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Surface electromigration of Ge, Au Cu and Ag on Si(111) surfaces was studied by reflection electron microscopy. Ge moves in a direction parallel to the DC current. The facts that Au and Cu move in opposite directions and that Au and Cu coadsorbed on Si(111) form the 2D ordered √3 × √3 structure suggest a phase separation of the √3 × √3 structure by the DC current and a tendency of it was noticed. A strong effect of steps on the migration of Ag was noted both on clean Si(111)7 × 7 surfaces and on Si(111)5 × 5-Ge surfaces.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(92)90398-H