Ag thin film growth on hydrogen-terminated Si(100) surface studied by TOF-ICISS

• Published in: Applied surface science 1992, Vol.60, p.195-199
• Main Authors: Tanaka, Yasunori, Kinoshita, Toshihiro, Sumitomo, Koji, Shoji, Fumiya, Oura, Kenjiro, Katayama, Itsuo
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Metals. Metallurgy; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/0169-4332(92)90416-U

Using time-of-flight (TOF) type low-energy impact-collision ion scattering spectroscopy (ICISS) and elastic recoil detection analysis (ERDA), we have investigated (1) the effect of the saturation of surface dangling bonds of Si(100) surfaces with atomic hydrogen upon Ag thin film growth, and (2) the effect of hydrogen adsorption onto Ag thin films (∼ 1 ML coverage) on the clean surfaces. We find that (1) epitaxial growth of Ag films is promoted by the hydrogen atoms residing at the film/substrate interface and (2) adsorption of hydrogen onto Ag monolayer deposited on Si(100) surfaces transforms the Ag monolayer into very small crystallites of Ag(100) grown epitaxially on the Si(100) substrate.