Process control for III–V semiconductor device fabrication using mass spectroscopy

This paper describes several important applications in processing semiconductors and related materials where mass spectrometry has made an impact in the fabrication of devices. Residual gas analysis and secondary ion mass spectrometry have been utilised for contamination monitoring, process control...

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Bibliographic Details
Published in:Applied surface science 1993, Vol.63 (1), p.70-74
Main Author: Webb, A.P.
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:This paper describes several important applications in processing semiconductors and related materials where mass spectrometry has made an impact in the fabrication of devices. Residual gas analysis and secondary ion mass spectrometry have been utilised for contamination monitoring, process control and end-point detection. Examples are described where these techniques are now routinely used for monitoring and process control.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(93)90066-K