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The adsorption and dissociation of NO on Rh(100) and stepped Rh surfaces

The adsorption and dissociation of NO on Rh were studied between 80 and 700 K on (100) and stepped (100) crystal planes. The influence of the surface structure on these processes was determined using a scanning field electron emission microscope (SFEM). On Rh(100) a special binding state of NO was f...

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Bibliographic Details
Published in:Applied surface science 1993-04, Vol.67 (1), p.188-197
Main Authors: van Tol, M.F.H., Nieuwenhuys, B.E.
Format: Article
Language:English
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Summary:The adsorption and dissociation of NO on Rh were studied between 80 and 700 K on (100) and stepped (100) crystal planes. The influence of the surface structure on these processes was determined using a scanning field electron emission microscope (SFEM). On Rh(100) a special binding state of NO was found at low temperatures, which could be the bent NO-species predicted by earlier theoretical calculations by the Hoffmann group (Langmuir 6 (1990) 732, ref. [1]) and experimentally observed by Villarrubia and Ho (J. Chem. Phys. 87 (1987) 750, ref. [2]). Furthermore, crystal planes like (711) and (911) show a characteristic behaviour upon NO adsorption at 300 K.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(93)90311-X