Shallow p-n junctions produced by laser doping with boron silicate glass

Shallow junctions have been fabricatd using an excimer and a CO 2 laser as heating source. The diffusion was made out of a silicate glass layer. The produced diodes were electrically characterized. The concentration profiles measured by SIMS agree with simulations by ICECREM and have a depth of abou...

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Bibliographic Details
Published in:Applied surface science 1993-05, Vol.69 (1), p.249-252
Main Authors: Bollmann, D., Neumayer, G., Buchner, R., Haberger, K.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Shallow junctions have been fabricatd using an excimer and a CO 2 laser as heating source. The diffusion was made out of a silicate glass layer. The produced diodes were electrically characterized. The concentration profiles measured by SIMS agree with simulations by ICECREM and have a depth of about 100 nm.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(93)90512-A