Alternative ohmic contact systems to n-InP

In this study specific contact resistance ( r c), Auger electron spectroscopy and morphology results are reported for Au/Pt/Ti, Au/Ni/Ti and Au/Ru/Ti ohmic contact systems to n-InP. These contacts were fabricated on Ar + sputtered and chemically etched InP surfaces. Irrespective of the pre-metalliza...

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Bibliographic Details
Published in:Applied surface science 1993-01, Vol.70 (1-4), p.515-519
Main Authors: Barnard, W.O., Myburg, G., Auret, F.D., Malherbe, J.B., Louw, C.W.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:In this study specific contact resistance ( r c), Auger electron spectroscopy and morphology results are reported for Au/Pt/Ti, Au/Ni/Ti and Au/Ru/Ti ohmic contact systems to n-InP. These contacts were fabricated on Ar + sputtered and chemically etched InP surfaces. Irrespective of the pre-metallization treatment, minimum r c values of 1×10 −5 Ω·cm 2 were obtained afte annealing at 450°C. It was found that the Ar + sputtering step is unnecessary in the processing of ohmic contacts to InP. The Au/Ru/Ti contact combination revealed the best surface morphology after annealing, although the morphologies of all three systems were excellent in comparison with the Au/Ni/Au-Ge contact scheme.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(93)90572-S