Defect profiling in multilayered systems using mean depth scaling

• Published in: Applied surface science 1995-01, Vol.85, p.196-209
• Main Authors: Aers, G.C., Marshall, P.A., Leung, T.C., Goldberg, R.D.
• Format: Article
• Language: English
• Subjects: Composition; defects and impurities; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other interactions of matter with particles and radiation; Physics; Positron annihilation; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/0169-4332(94)00332-7

Ghosh et al. recently proposed that positron stopping profiles in elements and elemental multilayers, calculated by Monte Carlo for incident positron energies in the range 1–10 keV, may be scaled onto energy independent curves using the mean implantation depth. It is shown here that Monte Carlo stopping profiles in elemental multilayer systems can be reproduced accurately in the incident energy range 1–25 keV using a modification of this scaling model that takes into account the backscattering effects of interfaces. The mean depth scaling approach represents a saving of several orders of magnitude in the computation time for multilayer stopping profiles and has been incorporated into a new defect profiling program POSTRAP6.