Atomic layer epitaxy growth of doped zinc oxide thin films from organometals

• Published in: Applied surface science 1994-12, Vol.82 (1-4), p.34-40
• Main Authors: Lujala, Vesa, Skarp, Jarmo, Tammenmaa, Markku, Suntola, Tuomo
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots); Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Optical properties of specific thin films, surfaces, and low-dimensional structures; Physics; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/0169-4332(94)90192-9

An atomic layer epitaxy process for growing Al-doped ZnO thin films is presented. Organometallic precursors of zinc and aluminum were used to react with water at substrate temperatures of 120–350°C. Growth rate varied from 0.5 to 2.5 Å/cycle, depending on precursors and substrate temperatures used. With optimum doping, sheet resistances of 10 Ω/□ with 1 μm thick films were obtained.